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Department of Electronics, Faculty of Engineering, Himeji Institute of Technology | 論文
- Low-Temperature Fabrication of Ir/Pb(Zr,Ti)O_3/Ir Capacitors Solely by Metalorganic Chemical Vapor Deposition
- Step Coverage Characteristics of Pb(Zr, Ti)O_3 Thin Films on Various Electrode Materials by Metalorganic Chemical Vapor Deposition
- Precise Angle and Position Detection Utilizing Optical Interference on Metal-Oxide-Semiconductor-Type Position-Sensitive Detectors
- Chemical Composition of Al_2O_3/InP Metal-Insulator-Semiconductor Interfaces Improved by Plasma and Ultraviolet Oxidation
- Barrier Height of InP Schottky Diodes Prepared by Means of UV Oxidation
- MOS-Type One-Dimensional Position-Sensitive Detectors with a Linearly Delectable Face of 30 mm Long
- Determing Factors of Mortality in the Elderly with Hip Fractures
- Size Effects of Epitaxial and Polycrystalline Pb(Zr, Ti)O_3 Thin Films Grown by Metalorganic Chemical Vapor Deposition
- ICTS of MOS Interface States Enhanced by Gold Diffusion
- Rabeprazole reduces the recurrence risk of peptic ulcers associated with low-dose aspirin in patients with cardiovascular or cerebrovascular disease : a prospective randomized active-controlled trial
- An MOS-Type Two-Dimensional PSD Using the AC Photovoltage Phase