スポンサーリンク
Department of Electronic Engineering, Osaka University | 論文
- O-12 Short-Pitch Ferroelectric Liquid Crystal Mixtures
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Thickness Dependence of Furnace N_2O-Oxynitridation Effects on Breakdown of Thermal Oxides
- Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
- Electrochemical Properties of Fullerene Derivative Polymers as Electrode Materials
- Optical Near-Field Imaging Using the Kelvin Probe Technique
- Force Imaging of Optical Near-Field Using Noncontact Mode Atomic Force Microscopy
- High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure
- Helix-Coil Transition and Degree of Polymerization of Double Chains of Complementary Homopolynucleotides
- Improvement of Electrode/Organic Layer Interfaces by the Insertion of Monolayer-like Aluminum Oxide Film
- Enhanced Emission from Europium Complex Utilizing Quantum-Well Structure in Organic Electroluminescent Device
- DEADLOCK-FREE CONDITIONS FOR A CLASS OF PETRI-NETS(Mathematical Theory of Control and Systems)
- Study of a Length Coefficient for an Extended Drift-Diffusion Model for Metal-Oxide-Semiconductor (MOS) Device Simulation
- Impact Ionization Model Using Average Energy and Average Square Energy of Distribution Function
- Novel Impact Ionization Model for Device Simulation Using Generalized Moment Conservation Equations
- Nonlocal Impact Ionization Model and Its Application to Substrate Current Simulation of n-MOSFET's
- Conductance through Laterally Coupled Quantum Dots
- Effect of Quantum Confinement and Lattice Relaxation on Electronic States in GaAs/In_Ga_As/GaAs Quantum Dots ( Quantum Dot Structures)
- Direct Observation of Gaussian-Type Energy Distribution for Hot Electrons in Silicon