スポンサーリンク
Department of Electronic Engineering, Iwaki Meisei University | 論文
- Thermal Decompositiom of Ce0_2 in Ultra High Vacuum as a Cause of Polycrystalline Growth of Si Films on Epitaxial Ce0_2/Si
- Low-Temperature Epitaxial Growth of CeO_2(110)/Si(100) Structure by Evaporation under Substrate Bias
- Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons
- Ferroelectric Properties of Tungsten-Bronze Oxides with A_2A' Ta_5 O_ Type
- AFM Observation of 90°Domains of BaTiO_3 Butterfly Crystals
- RBS/Channeling Study of the Crystallographic Correlation for Epitaxial CeO_2 on Si
- High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
- Characterization of Epitaxially Grown CeO_2(110) Layers on Si by Means of Shadowing Pattern Imaging with Fast Ion Beams
- Electrical Characteristics of Metal/Cerium Dioxide/Silicon Structures
- Quantitative Analysis of Oxygen Deficiency in Epitaxial CeO_2 Layers on Siby Detecting ^O Added for Stoichiometry
- Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO_2 Layers and Si Substrates
- Texture Structure Analysis and Crystalline Quality Improvement of CeO_2(110) Layers Grown on Si(100) Substrates
- Development of a New Diagnosis Method for Incipient Caries in Human Teeth Based on Thermal Images under Pulse Heating
- Comment on "Second-Order Piezoresistance Coefficients of n-Type Silicon"
- Fourth-Order Piezoresistance Coefficients in Cubic Semiconductors