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Department of Electrical and Electronic Engineering, Tokyo Institute of Technology | 論文
- Magnetic Properties of the Heavy-Fermion Antiferromagnet Ce_7Ni_3
- Internal Fields Observed by Heavy Itinerant Electrons in the Superconducting Ferromagnet UGe_2
- Switching of Magnetic Ordering in CeRhIn_5 under Hydrostatic Pressure
- End-to-side Anastomosis for Coarctation of the Aorta and Type A Aortic Arch Interruption with Hypoplastic Aortic Arch
- Ross Procedure in an Infant Weighing 4.5kg : Eight years Follow-up
- Mitral Valve Replacement for Children with a Small Annulus Using ATS Open Pivot Prosthesis
- Photoemission and Bremsstrahlung from Uranium Compounds : Chapter 4. Optical Properties : 4-1. Photoemission and inverse Photoemission Studies of Electronic Structures
- Magnetic Properties of Single Crystals of Ce_xLa_B_6
- Current status and issues of C1q nephropathy
- Complete remission of a primary cutaneous follicle-center cell lymphoma (EORTC criteria)/diffuse large B-cell lymphoma (WHO criteria) by single first-line therapy with rituximab
- X-Ray Photoelectron Spectroscopy Study of U (Rh_Pd_x)_3 Alloys
- Developmemt of High-Efficiency CuIn_xGa_Se_2 Thin-Film Solar Cells by Selenization with Elemental Se Vapor in Vacuum
- Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium
- Characterization of Carbon-Doped GaAs Grown by Molecular Beam Epitaxy Using Neopentane as Carbon Source
- Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE
- Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- Preparation of GaAs and Ga_Al_xAs Multi-Layer Structures by Metalorganic Molecular Beam Epitaxy