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Department of Electrical and Computer Engineering, Nagoya Institute of Technology | 論文
- An Improved Circuit Theory for the Analysis of Longer Co-planar Dipole Antennas
- Enzymatic Conversion of Dehydrodivanillin to Vanillin by an Anaerobic Recombinant FE7
- Anaerobic Degradation of Dehydrodiisoeugenol by Rumen Bacteria
- Polyketomycin, a New Antibiotic from Streptomyces sp. MK277-AF1 II. Structure Determination
- Polyketomycin, a New Antibiotic from Streptomyces sp. MK277-AF1 I. Taxonomy, Production, Isolation, Physico-chemical Properties and Biological Activities
- Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser Ablation Hybrid Process
- Pseudogap Formation near at the Border of an Insulator-Metal Transition in SmS(Condensed matter: structure and mechanical and thermal properties)
- Characterization of Dimeric (Carboxylato)copper(II) Complexes by Electron Spin Resonance Spectra. Correlation of ESR Parameters with Singlet-Triplet Energy Separations
- Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
- Polynomially Fast Parallel Algorithms for Some P-Complete Problems (Special Section on Discrete Mathematics and Its Applications)
- A Parallel Algorithm for Constructing Strongly Convex Superhulls of Points(Special Section on Discrete Mathematics and Its Applications)
- Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
- Turbo Equalization of GMSK Signals Using Noncoherent Frequency Detection(Special Issue on Signals, Systems and Electronics Technology)
- Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
- Mechanical Property Characterization of Boron-Doped Silicon by Berkovich-Type Indenter : Semiconductors
- Effect of NaOCl-Polishing on Metal Organic Chemical Vapor Deposition grown GaAs Surface on Si Substrate by Spectroscopic Ellipsometry and Atomic Force Microscopy
- Simplified Dual Channel Optical Trarnsmission Using Integrated Light Emitters and Photodetectors
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment