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Department of Electrical Engineering, University of Notre Dame | 論文
- Quantum-Dot Cellular Automata: Line and Majority Logic Gate
- L_2 Gain Analysis of Switched Systems with Average Dwell Time
- A critical role of Sonic Hedgehog signaling in maintaining the tumorigenicity of neuroblastoma cells
- Low Threshold and Low Divergence Blue Vertical-Cavity Surface-Emitting Laser Diodes
- Electrically Pumped CdZnSe/ZnSe Blue-Green Vertical-Cavity Surface-Emitting Lasers
- Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
- Mobile Location Estimation in Wireless Communication Systems
- Hybrid TOA/AOA Geometrical Positioning Schemes for Mobile Location
- Hybrid interior point training of modular neural networks
- Effect of Stray Charge on Quantum Cellular Automata
- Si-Containing Recessed Ohmic Contacts and 210GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
- InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_{\text{T}}/f_{\text{max}} of 260/220 GHz
- Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz
- InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_T/f_ of 260/220GHz