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Department of Electrical Engineering, Osaka University | 論文
- Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition
- Control of Nucleation Site and Growth Orientation of Bulk GaN Crystals
- A New Nonlinear Optical Borate Crystal K_2Al_2B_2O_7 (KAB)
- Na : A New Flux for Growing Hexagonal Boron Nitride Crystals at Low Temperature
- Epitaxial Growth of AlN Thin Films on Sapphire by Pulsed Laser Deposition and Effect of N_2 Ambient on Crystallinity
- Formation of Rough GaN Surface by Hydrogen Plasma Treatment and Its Application to Field Emitter : Semiconductors
- Balanced State Feedback Controllers for Discrete Event Systems Described by the Golaszewski-Ramadge Model
- Electrical and Optical Characteristic of Liquid Phase Epitaxial In_xGa_As
- Valley Transfer of Hot Electrons in GaAs and Related Mixed Crystals (Selected Topics in Semiconductor Physics) -- (Transport)
- Liquid Epitaxial Growth and Characterization of Cr-Doped In_xGa_As
- Velocity-Field Characteristics in III-V Mixed Crystals, GaSb_xAs_ and In_xGa_As
- Observation of the Finite Superconducting Gap States in La_Sr_CuO_ by Electron Tunneling
- Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling
- Heteroepitaxial Growth of ZnS_xTe_ on GaAs(100) by RF Sputtering
- Preparation and Crystallization Process of the High-T_c Superconducting Phase (T_c(end)>100 K) in Bi, Pb-Sr-Ca-Cu-O Glass-Ceramics
- Electrocatalytic Four-Electron Reduction of Dioxygen by 1,2-Phenylene-Bridged Dicobalt Diporphyrins
- Synthesis of Metastable Ge_xSn_ Alloys by Chemical Sputtering in H_2
- Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon : Surfaces, Interfaces and Films
- Characterization of the Structure in Hydrogenated Amorphous Silicon by Means of ^Sn Mossbauer Spectroscopy
- Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique