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Department of Electrical Engineering, Kyoto University | 論文
- Monolithic Integrated Device for Light Amplification : B-3: NOVEL DEVICES
- C-10-7 EVALUATION OF BASE REGION PARAMETERS IN IGBT BASED ON CAPACITANCE-VOLTAGE CHARACTERISTICS
- A Discussion on the High Level Excess Carrier Lifetime Effect of IGBT Model
- Camera calibration by an integrating sphere for the auroral tomography observation
- Analysis of Japanese Sentences by Using Semantic and Contextual Information (I)-Semantic Analysis
- PLATON : a New Programming Language for Natural Language Analysis
- Analysis of Japanese Sentences by Using Semantic and Contextual Information (II)-Contextual Analysis
- Computer Simulation of RF-Confinement of Plasmas in an Open-Ended Toroidal Quadrupole
- Charging Characteristics of an Insulating Hollow Cylinder in Vacuum
- Calculation of Bond Lengths in InGaAsP Quaternary Alloy Semiconductor
- Average Bond Lengths and Atom Arrangement in In_Ga_xAs and GaAs_P_x III-V Ternary Alloy Semiconductors
- Alloy Scattering Mobility in III-V Ternary Alloy Semiconductors with Nonrandom Atom Arrangerment
- Optical Flip-Flop and Astable Multivibrator Functions by Vertical and Direct Integration of Heterojunction Phototransistors and Laser Diodes
- SiO_2 Film Deposition by KrF Excimer Laser Irradiation
- Plasma Etching of CVD Grown Cubic SiC Single Crystals
- Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC
- Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method
- Voltage Switching Technique for Detecting Nuclear Spin Polarization in a Quantum Dot
- A Case of Exercise-Lnduced Acute Renal Failure in a Patient with Idiopathic Renal Hypouricemia Developed during Antihypertensive Therapy with Losartan and Trichlormethiazide
- Galvanomagnetic Effects in Single Crystals of Cadmium Arsenide