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Department of Electrical Engineering, Fukuoka Institute of Technology | 論文
- Changes of DLTS Spectrum with Gold Concentration and Gold-Diffusion Temperature in N-Type Silicon
- Annealing of Supersaturated Low-Temperature Substitutional Gold in Silicon
- A Simple Method to Determine λ from Isothermal Capacitance Measurements
- Three States of Substitutional Gold in Silicon
- Effect of Annealing Method upon Annealing Characteristics of Supersaturated Substitutional Gold in Silicon
- Influence of Applying Bias Voltage on Diamond Nucleation while Changing the Experimental Condition
- Characteristics of Nucleation Using the Bias-Enhanced Nucleation Method at Low Pressure
- Applicabilities of Laser Thomson Scattering to Various Kinds of Discharge Plasmas
- Reverse Recovery Time of Junction Diodes with High Capture Rate of Minority Carriers in the Low Injection Level
- Development of Compact Ozonizer by Barrier Discharge for High Concentration Ozone Generation
- Conformal Deposition of High-Purity Copper Using Plasma Reactor with H Atom Source
- Arc Initiation on a Metal Surface Stained by Contamination and Exposed to Plasma