スポンサーリンク
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan | 論文
- Characterization of Damage of AlO/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Mean Transverse Energy Measurement of Negative Electron Affinity GaAs-Based Photocathode
- A New Collinear-Type Energy-Filtered X-ray Photoemission Electron Microscope Equipped with a Multi-Pole Aberration-Corrected Air-Core Coil Wien Filter
- Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures
- Bulk Sensitive Soft X-ray Angle-Resolved Photoemission Spectroscopy of Bi1.72Pb0.38Sr1.88CuO6+δ
- Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer
- Growth and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation
- In situ X-ray Reflectivity Measurements on Annealed In
- Formation of Palladium Silicide Thin Layers on Si(110) Substrates
- Differential effects of anti-inflammatory agents on lysosomal cysteine proteinases cathepsins B and H from rat spleen.
- Pentane isomerization activity of halogenated rare earth intermetallics.
- Fluorescence Microscopic Demonstration of Cathepsin K Activity as the Major Lysosomal Cysteine Proteinase in Osteoclasts.