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Department of Cardiology and Pneumology, Dokkyo University School of Medicine | 論文
- PJ-772 Novel Evaluation of the Abnormal Structure in RV before Catheter Ablation for Idiopathic Ventricular Tachycardia(Arrhythmia, diagnosis / Pathophysiology / EPS(11)(A),Poster Session(Japanese),The 72nd Annual Scientific Meeting of the Japanese Circul
- Stress-Induced Raman Frequency Shift in CuInSe_2 Thin Films Prepared by Laser Ablation
- Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy
- The therapeutic importance of home blood pressure assessment and combination antihypertensive therapy for achieving target blood pressure control : Ibaraki hypertension assessment trial
- Clinical evaluation of long-term use of a portable oxygen concentrator capable of operating under car battery power
- Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
- PE-189 Catheter Ablation of Atrial Tachycardia after Maze Operation with Cryo-ablation(Arrhythmia, therapy-11, The 71st Annual Scientific Meeting of the Japanese Circulation Society)
- Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
- Statistical Analysis and Change in the ANP Concentration(Author's Reply)
- Stent Thrombosis After Drug Eluting Stent Implantation
- Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
- Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter
- High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
- AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
- Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
- Does Direct Inhibition Bring Direct Benefit?
- Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
- Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
- Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
- High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate