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Department Of Technology Development Chartered Semiconductor Manufacturing Ltd. | 論文
- Influences of Nitridation on Barrier Height Change Caused by Electrical Stress : Semiconductors
- Influence of Nitrogen Proximity from the Si/SiO_2 Interface on Negative Bias Temperature Instability
- Negative Bias Temperature Instability on Plasma-Nitrided Si]icon Dioxide Film : Semiconductors
- A Strong Temperature-Dependent Hole Direct Tunneling Current in p^+-Gate/pMOSFET with Ultra-Thin Gate Oxide
- Reduction of Radiation-Induced Leakage Currents in Thin Oxides by Application of a Low Post-Irradiation Gate Bias
- Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11μm Dual Gate Oxide CMOS Technology
- Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11μm Dual Gate Oxide CMOS Technology
- Improving the Accuracy of Modified Shift-and-Ratio Channel Length Extraction Method Using Scanning Capacitance Microscopy
- Effective Channel Length Shortening and Mobility Increase of p-Channel Metal Oxide Semiconductor Transistors Resulting in Higher Drive Current Using Short Source-Drain Diffusion Length
- The impact of sentinel lymph node biopsy in patients with a core biopsy diagnosis of ductal carcinoma in situ
- Effective Channel Length Shortening and Mobility Increase of p-Channel Metal Oxide Semiconductor Transistors Resulting in Higher Drive Current Using Short Source–Drain Diffusion Length