A Strong Temperature-Dependent Hole Direct Tunneling Current in p^+-Gate/pMOSFET with Ultra-Thin Gate Oxide
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Cho Byung-jin
Department Of Electrical Engineering The National University Of Singapore
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Cho B‐j
Deptartment Of Electrical And Computer Engineering. National University Of Singapore
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Ang C‐h
Department Of Technology Development Chartered Semiconductor Manufacturing Ltd.
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Ang Chew-hoe
Department Of Electrical Engineering The National University Of Singapore
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Ling Chung-ho
Department Of Electrical Engineering The National University Of Singapore
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Cheng Zhi-yuan
Department Of Electrical Engineering The National University Of Singapore
関連論文
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- A Strong Temperature-Dependent Hole Direct Tunneling Current in p^+-Gate/pMOSFET with Ultra-Thin Gate Oxide
- Reduction of Radiation-Induced Leakage Currents in Thin Oxides by Application of a Low Post-Irradiation Gate Bias