Ang C‐h | Department Of Technology Development Chartered Semiconductor Manufacturing Ltd.
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概要
- ANG Chew-Hoeの詳細を見る
- 同名の論文著者
- Department Of Technology Development Chartered Semiconductor Manufacturing Ltd.の論文著者
関連著者
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Cho Byung-jin
Department Of Electrical Engineering The National University Of Singapore
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Cho B‐j
Deptartment Of Electrical And Computer Engineering. National University Of Singapore
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Ang C‐h
Department Of Technology Development Chartered Semiconductor Manufacturing Ltd.
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Ang Chew-hoe
Department Of Electrical Engineering The National University Of Singapore
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Ling Chung-ho
Department Of Electrical Engineering The National University Of Singapore
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Cheng Zhi-yuan
Department Of Electrical Engineering The National University Of Singapore
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Cho Byung-jin
Deptartment Of Electrical And Computer Engineering. National University Of Singapore
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Tan Shyue-seng
Department Of Electrical & Electronics Engineering. Nanyang Technological University
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LEK Chun-Meng
Deptartment of Electrical and Computer Engineering. National University of Singapore
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CHEN Tupei
Department of Electrical & Electronics Engineering. Nanyang Technological University
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LIN Wenhe
Department of Technology Development, Chartered Semiconductor Manufacturing Ltd.
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ZHEN Jia-Zheng
Department of Technology Development, Chartered Semiconductor Manufacturing Ltd.
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KIM Sun-Jung
Department of Electrical Engineering, The National University of Singapore
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Kim Sun-jung
Department Of Electrical Engineering The National University Of Singapore
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Zhen Jia-zheng
Department Of Technology Development Chartered Semiconductor Manufacturing Ltd.
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Lin Wenhe
Department Of Technology Development Chartered Semiconductor Manufacturing Ltd.
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Chen T
Department Of Electrical & Electronics Engineering. Nanyang Technological University
著作論文
- Negative Bias Temperature Instability on Plasma-Nitrided Si]icon Dioxide Film : Semiconductors
- A Strong Temperature-Dependent Hole Direct Tunneling Current in p^+-Gate/pMOSFET with Ultra-Thin Gate Oxide
- Reduction of Radiation-Induced Leakage Currents in Thin Oxides by Application of a Low Post-Irradiation Gate Bias