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Department Of Physics School Of Science Kwansei Gakuin University | 論文
- Effects of an Electric Field on the Decay Time of Luminescence from a GaAs/Ga_Al_As Multi-Quantum-Well Structure
- Effect of Electric Field on Transient Characteristics of Luminescence from GaAs/Ga_Al_As Multi-Quantum-Well Structure
- Improvement of Gate-Insulator/Silicon Interface Characteristics in Amorphous Silicon Thin Film Transistors
- Observation of Laser-Induced Melting of Silicon Film Followed by Amorphization
- Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by MBE
- High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Highly Uniform GaAs/AIAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
- One-Dimensional Conduction in NiAl Wires
- Single-Electron Tunneling in Coupled Quantum Dots
- Interference through Parallel Quantum Point Contacts
- X-Ray Diffraction Pattern of Dragon Lattice
- Dielectric Constant Measuremeny near the Metal-Insulator Transition in Al_Ga_As
- Fine Tuning of Metal-Insulator Transition in Al_Ga_As Using Persistent Photoconductivity
- Synchrotron X-Ray Diffraction Study of Third-Order Fibonacci Lattices
- Temperature Dependence of Molecular Beam Epitaxial Growth Rates for In_xGa_As and In_xAl_As
- Effective Mass Reversal on In_xAl_As/GaAs Strained-Layer Superlattices
- X-Ray Studies of Semiconductor Superlattices Grown by Molecular Beam Epitaxy