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Department Of Physics Gakushuin University | 論文
- A Study on IR Light Intensities Scattered from Defects in an Indum-Doped Liquid Encapsulaled Czochralski GaAs Crystals as Functions of Wavelength and Intensity of Bias Light Superposed on the Defects
- Observation of Lattice Defects in GaAs and Heat-treated Si Crystals by Infrared Light Scattering Tomography
- Measurement of Stress near Dislocation Walls in a ZnSe Signal Crystal by Raman Scattering Tomography
- Gaussian Field Theories on General Networks and the Spectral Dimensions
- Expression of LH-α and -β Subunit mRNAs in the Rat Placenta
- Study of Critical Phenomena by Spin-Cluster Approximation Series:Ising Spin System
- Gravitation in the Codimension Two Brane World
- Effect of Residual Stress on Hole Mobility of SOS MOS Devices
- Facet Shape and Crystal Profile of Complex Crystals
- Universal Behavior of the Equilibrium Crystal Shape near the Facet Edge.I.A Generalized Terrace-Step-Kink Model
- Electron-stimulated Desorption of Kr2+ Ions from the Surface of Solid Kr (第32回真空に関する連合講演会プロシ-ディングス)
- Collision of Time-Like Shells in Spherically Symmetric Spacetime : Astrophysics and Relativity
- Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
- In-situ Observation of Lubrication Dynamics between Soft Elastomer and Glass Substrate(Condensed matter: structure and mechanical and thermal properties)
- Critical Behavior of an Amorphous Ferromagnet near the Curie Point
- ABSOLUTE YIELDS OF THE TOTAL DESORPTION FROM THE SURFACE OF SOLID ARGON BY LOW ENERGY ELECTRON IMPACT
- Frictional Discharge from Sheared Asperities : Implication for Fractal Seismo-electromagnetic Radiation
- X-Ray Diffraction Microscopy by an Electronic Streak Camera System : Techniques, Instrumentations and Measurement
- Dynamics of Native Globular Proteins in Terms of Dihedral Angles
- Electrical Characteristics of Depletion-Type SOS MOS Devices