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Department Of Physics Engineering Mie University | 論文
- 4D Equivalence Theorem and Gauge Symmetry on an Orbifold(Particles and Fields)
- ΔC=ΔS=1 Decays of Charmed Baryons. II
- Nonleptonic Decays of 1^+/2-Baryons and Pseudo-Connected-Line Diagrams. II
- Eight Quark Model with Modified Left-Handed Currents
- Selective Ion Transfer Accompanied by a Respiration Mimetic Reaction at an Aqueous/Organic Solutions Interface
- The role of proton transfer on the redox process of vitamin E at the water : 1, 2-dichloroethane interface
- Improvements in a Ferrite Core Permeability Dispersion Measurement Based on a Microstrip Line Method
- Ferromagnetism and Superconductivity in the Multi-orbital Hubbard Model : Hund's Rule Coupling versus Crystal-Field Splitting
- Non-Bornian Ion Solvation Energy. An Approach from Redox Potentials of Heteropoly Oxometalate Anions
- Quantum Monte Carlo Simulation of Antiferromagnetic Heisenberg Model on the Triangular Lattice : Condensed Matter and Statistical Physics
- Dimer Character of the Ground State of the One Dimensional t-J-J' Model
- Copper-Oxide Superconductors as Mixed-Valence Heavy Fermions:Spin-Fluctuation Mechanism of Superconductivity
- New Vector-Like Model and Nonleptonic Decays of Ordinary and Charmed Hadrons
- Stable Microstructures on a GaAs(111)A Surface : the Smallest Unit for Epitaxial Growth
- Determination of Exchange Parameters from Magnetic Susceptibility
- Evaluation of Parameters in Atmospheric-Pressure Chemical Vapor Deposition of Borophosphosilicate Glass Using Tetraethylorthosilicate and Ozone : Semiconductors
- Morphology Evolution of SiO_2 Films Deposited by Tetraethylorthosilicate/O_3 Atmospheric-Pressure Chemical Vapor Deposition on Thermal SiO_2
- Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition Using 2, 4, 6, 8-Tetramethylcyclotetrasiloxane and Ozone
- Analysis of Si Schottky Barrier Characteristics Based on a New Interfacial Layer Model
- Accuracy in Permeability Measurement by a Combined Microstrip Line-Coaxial Conductor Method