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Department Of Physics Dongguk University | 論文
- Electrical and Microstructural Analyses on the Au/Ni/Au/Ge/Pd Ohmic Contact to n-InGaAs and n-GaAs
- Electrical and Microstructural Analyses on Pd/Ge-Based Ohmic Contact to n-InGaAs
- Role of Insertion Layer Controlling Wavelength in InGaAs Quantum Dots
- Hydrogenation and Annealing Effects on GaN Epilayers Grown on Sapphire Substrates
- Carbon Nanotube-Based Field-Emission Displays for Large-Area and Full-Color Applications
- Carbon-Nanotubes for Full-Color Field-Emission Displays
- Epitaxial Growth of GaN on LaAlO_3(100) Substrate by RF Plasma Assisted Molecular Beam Epitaxy
- Intraband Relaxation Time in Compressive-Strained Quantum-Well Lasers
- Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory
- Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al_2O_3p-Si Metal-Oxide-Semiconductor Capacitor
- Highly Conductive Tungsten Thin Films Prepared by the Plasma-Assisted Silane Reduction Process
- Effects of Sulfur Treatment and Hydrogen Plasma Treatment on GaAs
- Effects of Thermal Annealing on the Au/Ni and the Au/Ni/Si/Ni Contact Properties of p-type GaN Epilayers
- Effect of Annealing on the Impurities of 6H-SiC Single Crystals
- Novel and recurrent mutations in Keratin 5 and 14 in Korean patients with Epidermolysis bullosa simplex
- Rapid Thermal Annealing Effects in CdTe (111) Thin Films Grown on GaAs (100) Substrates
- Influence of Pt-related deep traps formed in rectifier junctions on high-speed and Low-leakage properties (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Influence of Pt-related deep traps formed in rectifier junctions on high-speed and Low-leakage properties (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Robust Molten Steel Level Control in a Strip-casting Process
- New Method of the Determination of HgCdTe/CdZnTe Composition by Infrared Transmission