Electrical and Microstructural Analyses on the Au/Ni/Au/Ge/Pd Ohmic Contact to n-InGaAs and n-GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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Park S
Dongguk Univ. Seoul Kor
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Park Sang
The National Creative Research Initiatives Center For Electron Emission Source Samsung Advanced Inst
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Lee J‐m
Etri Daejeon Kor
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Park Moon
Semiconductor Division Electronics And Telecommunications Research Institute
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Kim J
Samsung Electro-mechanics Co. Ltd
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Lee Jong-min
Semiconductor Division Electronics And Telecommunications Research Institute
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Lee T‐w
Seoul National Univ. Seoul Kor
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KIM Il-Ho
Semiconductor Division, Electronics and Telecommunications Research Institute
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PARK Sung
Semiconductor Division, Electronics and Telecommunications Research Institute
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KIM Jwayeon
Department of Materials Engineering, Hoseo University
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LEE Tae-Woo
Semiconductor Division, Electronics and Telecommunications Research Institute
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Kim Jongsun
Samsung Electra-mechanics Co. Ltd.
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Park S.
Department Of Physics Dongguk University
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Kim Il-ho
Semiconductor Division Electronics And Telecommunications Research Institute
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Park S
Department Of Chemistry Jeonju Uneversity
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Park Sung
Semiconductor and Information Display Research Division, Korea Electronics Technology Institute, Gyeonggi 450-268, Korea
関連論文
- Electrical and Microstructural Analyses on the Au/Ni/Au/Ge/Pd Ohmic Contact to n-InGaAs and n-GaAs
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