A Novel T-Shaped Shallow Trench Isolation Technology
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
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Park Moon
Semiconductor Division Electronics And Telecommunications Research Institute
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Ahn Dong
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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HONG Sug-Hun
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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KANG Ho
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Hong Sug-hun
Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Park Moon
Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Kang Ho
Semiconductor R&d Center Samsung Electronics Co. Ltd.
関連論文
- Electrical and Microstructural Analyses on the Au/Ni/Au/Ge/Pd Ohmic Contact to n-InGaAs and n-GaAs
- Electrical and Microstructural Analyses on Pd/Ge-Based Ohmic Contact to n-InGaAs
- A Novel T-Shaped Shallow Trench Isolation Technology
- A Novel LOCOS-Trench Combination Isolation Method for Maximum Chemical Mechanical Polishing(CMP) Process Window
- A Novel T-Shaped Shallow Trench Isolation Technology