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Department Of Photonics Faculty Of Science And Engineering Ritsumeikan University | 論文
- New Ternary Ordered Structures in CuMPt_6 (M=3d elements) Alloys(Condensed Matter : Structure, Mechanical and Thermal Properties)
- Secondary Ordering in Ternary Alloy CuMnPt_6(Condensed Matter : Structure, Mechanical and Thermal Properties)
- Solid Phase Crystallization in Initial Growth Region of Polycrystalline Silicon Layer During Deposition at 180℃ by Plasma Chemical Vapor Deposition
- X-ray Diffraction Study of Order-Disorder Phase Transition in CuMPt_6 (M=3d Elements) Alloys(Condensed matter: structure and mechanical and thermal properties)
- Development of Full-Color Display Combined with Ultraviolet-Electroluminescence/Photoluminescence Multilayered Thin Films
- X-ray Diffraction Study of Short-range Order and Long-range Ordered Structure in Cu-87.5 at.% Pt Alloy (Condensed Matter: Structure, Mechanical and Thermal Properties)
- X-ray Diffraction Study of Short-range Order and Long-range Ordered Structure in Cu-87.5at.% Pt Alloy
- Diffuse Scattering in the High-Temperature(1×1)State of Si(111)
- Surface Plasmon Dispersions of Ag Adsorbed Si(111) Surfaces Studied by Angle-Resolved Electron Energy Loss Spectroscopy
- Inelastic Low Energy Electron Diffraction Measurements of Hydrogen Adsorbed Si (001) Surfaces: 2×1:H and 1×1: :2H
- Enhancement of Surface Plasmon excitation by Low-Energy Electron due to Surface Resonance on Si (001)-2×1
- Dispersion of Surface-Plasmon at Clean Si(001)-2×1 Surface
- X-ray Diffraction Study on the Structural Phase Transitions of (KCN)_x (KBr)_Mixed Crystals
- X-Ray Diffraction Study of the Low Temperature Phase of Rubidium Cyanide
- Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy
- Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy
- Effects of Traps Formed by Threading Dislocations on Off-State Breakdown Characteristics in GaN Buffer Layer in AlGaN/GaN Heterostructure Field-Effect Transistors
- Growth of Hlgh-Electron-Mobility InN by RF Molecular Beam Epitaxy : Semiconductors
- Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure
- An Improvement of the Performance in the UV-EL/PL Full-Color Display by Rapid Thermal Annealing