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Department Of Materials Science And Engineering Yamaguchi University | 論文
- Development of White Light Emitting Diodes by Multi-layered Red, Green, and Bule Phosphors Excited by Near-ultraviolet Light Emitting Diodes
- Near-ultraviolet LED of the External Quantum Efficiency Over 45% and its Application to High-color Rendering Phosphor Conversion White LEDs
- Dependence of Light Extraction From Near-Ultraviolet Light-Emitting Diodes on Refraction Index, Transmittance and Shape
- Hybrid External Cavity Lasers Composed of Spot-Size Converter Integrated LDs and UV Written Bragg Gratings in a Planar Lightwave Circuit on Si(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- 1.3/1.55-μm Full-Duplex WDM Optical Transceiver Modules for ATM-PON (PDS) Systems Using PLC-Hybrid-Integration and CMOS-IC Technologies (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- 1.3/1.55-μm Full-Duplex WDM Optical Transceiver Modules for ATM-PON (PDS) Systems Using PLC-Hybrid-Integration and CMOS-IC Technologies (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Study on the Luminous and Thermal Characteristics of High-Power Near-Ultraviolet LED Packages with Various Chip Arrangements
- Development of Light Sources by Large-Scale Integrated Light-Emitting Diodes
- Analysis of Chip/Bump/Ceramic Interface of Flip-Chip Bonded LED Directly on Ceramic Packages
- Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
- Growth of Bulk Gan Single Crystals by the Pressure-Controlled Solution Growth Method
- Developments of GaN Bulk Substrates for GaN Based LEDs and LDs(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method
- Internal Quantum Efficiency of Nitride-based Light-Emitting Diodes
- Optical Properties of ZnCdS:I Orange and ZnSTe:I White Thin Film Phosphor for High Ra White LED
- Radiation from Multiple Reflected Waves Emitted by a Cabin Antenna in a Car(Special Section on Multi-dimensional Mobile Information Networks)
- Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
- Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based LEDs Fabricated on Patterned Sapphire Substrates
- Recombination Dynamics of Self-Trapped Excitons in the High-Efficient Blue LEDs under Reverse Bias Condition