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Department Of Materials Science And Engineering And Microelectronics And Information Systems Researc | 論文
- A Gold-Free Fully Copper-Metallized InP Heterojunction Bipolar Transistor Using Non-Alloyed Ohmic Contact and Platinum Diffusion Barrier
- A 1.2-V Operation Power Pseudomorphic High Electron Mobility Transistor for Personal Handy Phone Handset Application
- Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application : Semiconductors
- Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
- Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations
- A Comparison of the Microstructural Feature and Bonding Strength of Plasma-Sprayed Hydroxyapatite Coatings with Hydrothermal and Vacuum Post-Heat Treatment
- Interfacial Characterization of Porcelain Veneered on the Pure Titanium under Vacuum Firing
- Adherence of Porcelain Veneered on Titanium with an Intermediate Plasma-Sprayed Zirconia Layer
- New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique : Instrumentation, Measurement, and Fabrication Technology
- Controlled Placement of Self-Organized Ge Dots on Patterned Si(001) Surfaces
- Flower-Like Distribued Self-Oranized Ge Dots on Patterned Si (001) Substrates
- A Mechanism of Porosity Distribution in A356 Aluminum Alloy Castings
- Highly Selective GaAs/Al_Ga_As Wet Etch Process for the Gate Recess of Low-Voltage-Power Pseudomorphic High-Electron-Mobility Transistor
- Novel I-Line Phase Shift Mask Technique for Submicron T-Shaped Gate Formation
- Independent Tuning of the Confinement and Density in a Quantum Point Contact using a Center Gate and a Back Gate
- V-Band Flip-Chip Assembled Gain Block Using In_Ga_As Metamorphic High-Electron-Mobility Transistor Technology
- Sintered Behaviors and Electrical Properties of Cr50Cu50 Alloy Targets via Vacuum Sintering and HIP Treatments
- InAlAs/InGaAs Metamorphic High Electron Mobility Transistor with Cu/Pt/Ti Gate and Cu Airbridges
- High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications