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Department Of Materials Engineering The University Of Tokyo | 論文
- Suppression of Leakage Current and Moisture Absorption of La_2O_3 films with Ultraviolet Ozone Post Treatment
- Excellent Leakage Current of Crystallized Silicon-Doped HfO_2 Films Down to Sub-nm EOT
- Thermally Robust Y_2O_3/Ge MOS Capacitors
- Moisture Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on Silicon
- 26pPSB-58 MD simulations of heat transport in carbon nano-structures under non-reflecting boundary conditions
- PL evaluation of Si ring resonators (光エレクトロニクス)
- Granular Cell Tumors of the Breast : A Report of Two Cases
- Design Methodology for La_2O_3-Based Ternally Higher-κ Dielectrics
- A New Hf-based Dielectric Member, HfLaOx, for Amorphous High-k Gate Insulators in Advanced CMOS
- Generalized Model of Oxidation Mechanism at HfO_2/Si Interface with Post-Deposition Annealing
- Dielectric Constant Increase of Yttrium-Doped HfO_2 by Structural Phase Modification
- Far Infrared Study of Structural Distortion and Transformation of HfO_2 by Introducing a Slight Amount of Si
- Stable Observation of the Evolution of Leakage Spots in HfO_2/SiO_2 stacked structures by UHV-C-AFM
- Difference between O_2 and N_2 Annealing Effects on CVD-SiO_2 Film Quality Studied by the Time-Dependent OCP Measurement
- Deposition of Cu-Ag Alloy Film by Supercritical Fluid Deposition
- Semi-Phenomenological Analysis of Dynamics of Nonlinear Excitations in One-Dimensional Electron-Phonon System
- Motion of Charged Soliton in Polyacetylene Due to Electric Field. IV. : Damping of Soliton Velocity
- Motion of Charged Soliton in Polyacetylene Due to Electric Field.III. : Energetics
- Motion of Charged Soliton in Polyacetylene Due to Electric Field.II. : Behavior of Width
- Growth of Large Grained Silicon on Insulator by Electron Beam Annealing and Performance of MOS Devices : A-6: SILICON CRYSTALS