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Department Of Industrial Chemistry Faculty Of Engineering University Of Tokyo | 論文
- J-4 過渡反射格子法による半導体表面物性の温度依存性の評価(J.光音響技術)
- Laser-Stimulated Scattering Microscope Study of an Jon-Implanted Silicon Surface
- 速い無輻射緩和現象を観測する--高時間分解光熱変換分光法 (1992年の化学-9-)
- B-5 レーザ誘起超音波によるフレーム各種パラメータの計測(ポスターセッション)
- A-5 レーザ誘起格子による超音波の発生と計測化学への応用(音波物性)
- Nondestructive Evaluation for Distribution of Stress Using Photoacoustic Microscope : Photoacoustic Spectroscopy
- FOURIER TRANSFORM INFRARED PHOTOACOUSTIC SPECTROSCOPY OF FILM-LIKE SAMPLES
- Pulsed Laser Deposition of C_ Thin Films with Atomically Smooth Surface
- Comparison between 1- and 2-Naphthoic Acids as an Extracting Agent for Cobalt(II), Nickel(II) and Copper(II)
- Characterization of Grown-in Dislocations in Benzophenone Single Crystals by X-Ray Topography
- Purification and Some Properties of Isocitrate Lyase from Paecilomyces varioti with High Malic Acid Production
- Polar Glass Structure for Second-Order Nonlinear Optics Prepared by the Langmuir-Blodgett Method Using Amorphous Polymers with an Azo-Dye
- Synthesis and Crystal Structure of a Novel Organic Ion-Complex Crystal for Second-Order Nonlinear Optics
- Experimental and Theoretical Two-Dimensional X-Ray Photoelectron Diffraction Patterns from GaAs(001) Surface
- Direct Atomic Site Determination of Foreign Atoms in a Crystal Surface Layer by X-Ray Photoelectron Diffraction
- Estimation of Surface Crystal Regularity by Utilizing X-Ray Photoelectron Diffraction (XPED) Effects
- Quantitative XPS Measurement on the Surfaces of GaP, GaSb and ZnSe Single Crystals
- Quantitative X-Ray Photoelectron Spectroscopic (XPS) Measurement on the Surfaces of GaAs(111), (111) and (110) Single Crystals : Determination of Relative Photo-Auger Ionization Cross Sections and Electron Mean Free Paths by Using the Crystal Regularity o
- Angular Denendence of XPS Intensities from GaAs (110) Surface : PHOTOEMISSION (MAINLY UPS AND XPS)
- DNA Hydrolysis by Cerium(IV) Does Not Involve either Molecular Oxygen or Hydrogen Peroxide