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Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology | 論文
- Role of the Tensor Force as an Effective Interaction in Odd-Odd Nuclei
- Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
- Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
- Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
- Initial Condition and Calculation Method for the Numerical Simulation of LPE
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
- Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
- The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
- The annealing temperature effects on the synthesis of n-TiO_2/dye/p-CuI solid state solar cells
- The Deposition of a-C : H Films by Pulsed Laser Ablation
- Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on n-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
- Low-Temperature Fabrication of Ion-Induced Ge Nanostructures : Effect of Simultaneous Al Supply
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
- Diamond Synthesized at Room Temperature by Pulsed Laser Deposition in Vacuum
- Fabrication and Characterization of Supersaturated Al-Mg Alloys by Severe Plastic Deformation and Their Mechanical Properties
- Computer Simulation of the Rapid Adaptation of Elongation Growth to Osmotic Stress in Segments of Cowpea Stem by Application of the Apoplast Canal Model
- Microstructure of metal-filled carbon nanotubes
- ^Mg (d,p)^Mg Reactions at 3.1 and 3.5 MeV
- Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
- Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique