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Department Of Electronics Faculty Of Engineering Osaka University | 論文
- Magnetophonon Resonance of Hot Electrons in n-InSb at 77K
- Electroreflectance for the Λ_3-Λ_1 Transitions in HgSe
- Effect of Electric Field on the Magnetophonon Oscillations in n-InSb and n-GaAs
- Temperature Dependence of the Band-Edge Effective Mass in n-InAs Deduced from Magnetophonon Resonance
- Measurements of Intervalley Phonons in n-Si by Magnetphonon Resonance : Physical Acoustics
- Magnetophonon Resonance in n-Type Germanium
- Measurements of Band-Edge and Intervalley Phonons in Semiconductors by Magnetophonon Resonance : Physical Acoustics
- Electroabsorption and Electroluminescence of GaSe
- Electroreflectance of GaSe. II. : 3.5-4.1 eV Region
- Electroreflectance of GaSe. I. : Around 3.4 eV
- Electric Field Effect on the Imaginary Part of the Dielectric Function in Highly Anisotropic Crystals
- A Hole Trap Center Related to the 2.361 eV Bound Exciton Emission in ZnTe Single Crystals
- Fascin overexpression correlates with positive thrombospondin-1 and syndecan-1 expressions and a more aggressive clinical course in patients with gallbladder cancer
- Strain Evaluation at Si/Si0_2 Interface Using the Electroreflectance Method
- Residual Strain in Semi-Insulating InP Wafers Treated by Multiple-Step Wafer Annealing
- A Study of Magnetophonon Effect in n-InSb Using Field Modulation Technique
- Surface Electronic States and Field-Ion Image Intensity of Metals
- Photoelastic Measurement of Strain Induced by Die-Bonding of GaAs Chip on a Copper Heatsink Plate
- Electroreflectance of Anodized n-GaAs MOS
- Hot-Electron Magnetophonon Effect in n-InSb at 77 K Investigated by Magnetic Field Modulation Technique