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Department Of Electronic Engineering Chubu University | 論文
- Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
- Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
- Novel Low-Cost Solid-State Heterojunction Solar Cell Based on TiO_2 and Its Modification for lmproved Efficiency
- Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
- Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
- Theoretical Studies on Hole Transport and the Effective Hall Factor in Cubic Phase of p-Type GaN
- Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
- The Deposition of a-C : H Films by Pulsed Laser Ablation
- Formation of Thin Oxide Films on Room-Temperature Silicon (100) by Exposure to a Neutral Beam of Hyperthermal Atomic and Molecular Oxygen
- Oxidation Properties of Hydrogen-Terminated SI (001) Surfaces Following Use of a Hyperthermal Broad Atomic Oxygen Beam at Low Temperatures : Instrumentation, Measurement, and Fabrication Technology
- Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
- Effect of Low-Energy Ion Bombardment upon Field-Stimulated Exoelectron Emission from Tungsten Surfaces
- Surface Reaction of a Low-Flux Atomic Oxygen Beam with a Spin-Coated Polymide Film : Synergetic Effect of Atomic Oxygen and Ultraviolet Exposures
- Surface Reaction of a Low Flux Atomic Oxygen Beam with a Spin-Coated Polyimide Film : Translational Energy Dependence on the Reaction Efficiency
- Motion Detecting Artificial Retina Model by Two-Dimensional Multi-Layered Analog Electronic Circuits
- Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors