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Department Of Electrical Engineering Technical College Kyoto Institute Of Technology | 論文
- Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
- Determination of Donor Densities and Donor Levels in 3C-SiC Grown from Si_2(CH_3)_6 Using Hall-Effect Measurements
- Dual Focus Optical Head with a Hologram-Integrated Lens
- Dual Focus Optical Head for 0.6mm and 1.2mm Disks
- Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
- Bias-enhanced Nucleation of Oriented Diamond on Singlecrystalline 6H-SiC Substrates
- Diamond Nucleation on Singlecrystalline 6H-SiC Substrates by Bias-Enhanced Nucleation in Hot Filament Chemical Vapor Deposition
- A Holographic Optical Element for an Integrated Optical Head
- A Very Small Holographic Optical Pick-up Head with a Movable Single-Assembly Optical System : Head Technology
- A Very Small Holographic Optical Pick-up Head with a Movable Single-Assembly Optical System
- Plasma Copolymerization of Tetratluoroethylene/Hexamethyldisiloxane and In Situ Fourier Transform Infrared Spectroscopy of Its Gas Phase
- Plasma Etching of CVD Grown Cubic SiC Single Crystals
- Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC