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Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology:semiconducto | 論文
- Application of Electron Cyclotron Resonance Plasma Thermal Oxidation to Bottom Gate Polysilicon Thin Film Transistors
- Suppression of Leakage Current in n-Channel Polysilicon Thin-Film Transistors Using NH_3 Annealing
- Effect of the Silicidation Reaction Condition on the Gate Oxide Integrity in Ti-polycide Gate
- Endurance Characteristics and Degradation Mechanism of Polysilicon Thin Film Transistor EEPROMs with Electron Cyclotron Resonance N_2O-Plasma Gate Oxide
- High-Performance EEPROMs Using N- and P-Channel Poly-Si TFTs with ECR N2O-Plasma Oxide
- Effect of Bottom Polysilicon Doping on the Reliability of Interpoly Oxide Grown Using Electron Cyclotron Resonence N_2O-Plasma
- Short Channel Effects in N- and P-Channel Polycrystalline Silicon Thin Film Transistors with Very Thin Electron Cyclotron Resonance N_2O-Plasma Gate Dielectric
- Short-Channel Effects in N- and P-Channel Polysilicon Thin Film Transistors with Very Thin ECR N_2O-Plasma Gate Dielectrics
- Highly Reliable Interpoly Oxide Using ECR N_2O-Plasma for Next Generation Flash Memory