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Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Applied Ph | 論文
- Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
- Changes of Structural, Electrical, and Optical Properties of Microcrystalline Si_xGe_ Films by Annealing
- Growth of Microcrystalline Si_xGe_ Alloy Films by Sputter-Assisted-Plasma CVD
- Dependence of Electronic Properties of Hydrogenated Amorphous Ge on Deposition Condition
- Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
- Energy Band Model of Undoped a-Ge:H Prepared by Plasma CVD
- Structural Changes of Amorphous Ge_Sn_x Alloy Films by Annealing
- Localized-State-Density Distribution in Post-Hydrogenated CVD Amorphous Silicon
- Schottky Barrier Solar Cells of Weakly Hydrogenated CVD Amorphous Silicon : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- Gap States and ESR of Boron-Doped CVD Amorphous Silicon
- Electronic Density of States in Chemically Vapor-Deposited Amorphous Silicon
- Localized States in Amorphous and Polycrystallized Si
- Surface States in Tunnelable MOS Structures