スポンサーリンク
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University | 論文
- Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
- Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
- Phosphorous Incorporation in Ultrathin Gate Oxides and Its Impact to the Network Structure
- Reflectance spectra of BN Materials in the Vacuum Ultraviolet
- Photoluminescence of Si Microcrystals Embedded in Si0_2 Glass Films
- Photoluminescence from Si Network in SiO_2-Doped Si Films
- Appearance of Quasi-Direct Optical Transition from Si Network in SiO_2-Doped Si Films
- Visible Photoluminescence from Si Microcrystals Embedded in SiO_2 Glass Films
- Preparation and Properties of Si Microcrystals Embedded in SiO_2 Glass Films
- Preparation and Properties of Ge Microcrystals Embedded in SiO_2 Glass Films
- Structural Changes of Amorphous GeTe_2 Films by Annealing (Formation of Metastable Crystalline GeTe_2 Films)
- Interface States Induced by Amorphous SiO_2 in MOS Structures
- Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
- Preservation of pathological tissue specimens by freeze-drying for immunohistochemical staining and various molecular biological analyses
- Preparation of the High-T_c Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O films by Pyrolysis of 2-Ethylhexanoates : Electrical Properties of Condensed Matter
- Formation of High-T_c Superconducting BiSrCaCu_2O_x Films on ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- preparation of BiSrCaCu_2O_x Films with T_c>77 K by Pyrolysis of Organic Acid Salts : Electrical Properties of Condensed Matter
- DSC Studies of Glassy Behavior in P-Doped a-Si:H : Condensed Matter
- Optical and Mechanical Properties of Hard Hydrogenated Amorphous Carbon Films Deposited by Plasma CVD
- Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers