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Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase | 論文
- Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
- Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
- Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs
- Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
- Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
- Molecular Beam Epitaxial Growth of ZnO on Si Substrate Using Ozone as an Oxygen Source
- Establishing and maintaining axial growth : wall mechanical properties and the cytoskeleton
- High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
- In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- Selective Growth of GaAs on GaAs (111)B Substrates by Migration-Enhanced Epitaxy
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- TM-Mode Selective Filter Using a High Refractive Index Lossy Layer Cladded Optical Waveguide
- High Electron Mobility in AlGaAs/GaAs Modulation-Doped Structures
- Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties
- Effect of Structure on Transport Characteristics of Ballistic One-Dimensional Channel
- Growth of GaAs/InAs Antidot Structure by Solid-Source MBE
- Growth of GaAs/InAs Anti-Dot Structure by Solid Source MBE
- Misorientation in GaAs on Si Grown by Migration-Enhanced Epitaxy
- In Situ Optical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition