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Department Of Electrical And Electronic Engineering | 論文
- Time-resolved luminescence spectra of porous Si
- Evidence for Defect Creation by Light Irradiation in CdSSe-Doped Glass
- Nucleation of Polycrystalline Silicon Grains
- Febrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-μm-Wide Emitter : Semiconductors
- Reduction of Base-Collector Capacitance inSubmicron InP/GalnAs Heterojunction Bipolar Transistors with Buried Tungsten Wires : Semiconductors
- Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes
- First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance
- Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
- Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure
- High Temperature Estimation of Phase Coherent Length of Hot Electron Using GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by OMVPE
- Monolayer Steps Formation in InP and GaInAs by OMVPE and Reduction of Resonant Energy Width in GaInAs/InP RTDs
- Electrical Properties of 100 nm Pitch Cr/Au Fine Electrodes with 40 nm Width on GaInAs
- Effect of Surface Phosphidization on GaAs Schottky Barrier Junctions
- Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
- 招待講演 InGaAs/InP MISFET with epitaxially grown source (Electron devices)
- Photoresponsive Change of the Surface Potential Generated by Helical Peptide Self-Assembled Monolayers
- Surface Potential of Heat-Treated PI Langmuir-Blodgett Films Deposited on Metal Electrodes
- Ultraviolet Photoelectron Spectroscopy and Surface Potential of π-conjugated Langmuir-Blodgett Films on Gold Metal Electrode
- Electrostatic Phenomena in π-conjugated Langmuir-Blodgett Films on Metal Electrodes