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Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology | 論文
- Evaluation of a Passive Air Sampler for Measuring Indoor Formaldehyde
- Wet Chemical Etching for Ultrafine Periodic Structure : Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth : Etching and Deposition Technology
- A Deposition Mechanism of SiO_2 Chemical Vapor Deposition Using Tetra-Isocyanate Silane and Water
- Transient Temperature Profiles in Silicon Films during Pulsed Laser Annealing
- On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing
- Analysis of Phase Breaking Effect in Resonant Tunneling Diodes Using Correlation Function
- Negative Differential Resistance of CaF_2/CdF_2 Triple-Barrier Resonant-Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy
- Surgical Treatment of Sturge-Weber Syndrome : Case Report
- High Voltage Thyristor Pulser for Spark Gap Switches
- Switching of Microwave Energy by a Superconducting Polycrystalline BaPb_Bi_xO_3 Thin Film
- Theoretical Calculations for the Elimination of Silanol and Decrease in Dielectric Constant
- Molecular Beam Epitaxial Growth of GaN on(0001)Al_2O_3 Using an Ultrathin Amorphous Buffer Layer Deposited at Low Temperature
- Growth of III-VI Compound Semiconductors by Metalorganic Molecular Beam Epitaxy
- Growth of ZnSe-ZnS Strained-Layer Superlattices by Metallorganic Molecular Beam Epitaxy
- Efficient Embeddings of Binary Trees with Bounded Proper Pathwidth into Paths and Grids
- EOSINOPHILIC GASTROENTERITIS ASSOCIATED WITH GIANT FOLDS
- Postpartum subarachnoid hemorrhage due to Moyamoya disease associated with renal artery stenosis
- Measurement of a Decaying Plasma with Cryogenic Electron Temperature in 4.2 K Helium Gases
- New bound for affine resolvable designs and its application to authentication codes
- Ultra-Thin Amorphous-Silicon Transistors Fabricated by Two-Step Deposition Method