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Department Of Electrical And Electronic Engineering The University Of Tokushima | 論文
- Coupling of the Surface and Interface Excitations in Small Coated Particles
- Low-dimensional Plasmons in a Metallic Strip Monolayer on a Semiconductor Surface(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Electronic Structure of Small Spherical Metal Shells
- Electronic Structure of the Carrier System in Small Semiconductor Particles
- Influence of Surface Roughness on Secondary Electron Emission and Electron Backscattering from Metal Surface
- Magnetohydrodynamic Simulation of Kink Instability and Plasma Flow during Sustainment of a Coaxial Gun Spheromak
- Carrier Plasmon-Polar Phonon Coupling at Semiconductor Surfaces
- Two-Fluid Flowing Equilibria of Helicity Injected Spherical Torus with Non-Uniform Density
- Solar PV Generation System with AC Terminal Voltage Control Capability
- Al0.17Ga0.83N film using middle-temperature intermediate layer grown on (0001) sapphire substrate by metal-organic chemical vapor deposition
- Simple Model for the Equation of State and Orientational Order-Disorder Transition of C_ Solid under Pressure
- High voltage generation from inductive pulsed power generator using a Marx circuit and an exploding wire
- ISO-3-3 A promising conservative treatment option for cervical pregnancy : angiographic uterine artery embolization followed by immediate curettage(Group 3 Perinatology,IS Award Candidate,International Session)
- Effect of GaNP buffer layer on AlGaN epilayers deposited on (0001) sapphire substrates by metalorganic chemical vapor deposition
- Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers
- Growth of AlN and GaN by metalorganic chemical vapor deposition on BP synthesized by flux method
- The Quantum-Confined-Stark-Effect on the luminescence properties of InGaN/GaN/AlGaN pn junction structure
- Some remarks on ordered fields Dedicated to Professor Yuhiyoshi Kawada for his sixtieth birthday
- Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition
- Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates