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Department Of Electrical And Computer Engineering Nagoya Institute Of Technology | 論文
- High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
- Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode
- Higher Order Delta-Sigma AD Converter with Optimized Stable Coefficients(Analog Signal Processing)(Regular Section)
- Correlation of Transfer Function Implementation on Delta-Sigma Modulator Stability Analysis
- Light Detection by Superconducting Weak Link Fabricated with High-Critical-Temperature Oxide-Superconductor Film
- Visual navigation for a mobile robot using landmarks
- de Haas-van Alphen Effect in LaGa_2
- Low-Resistance Ohmic Contacts to p-GaAs
- Improving Convergence Characteristics of an MMSE Adaptive Array Utilizing the Guard Interval in OFDM Signal(The IEICE Transactions (publishedin Japanese) Vol. J 86-B, No.6(Communications))
- Assessment of the Structural Properties of GaAs/Si Epilayers Using X-Ray (004) and (220) Reflections
- Characterization and Improvement of GaAs Layers Grown on Si Using an Ultrathin a-Si Film as a Buffer Layer
- The Method of Matrix-Order Reduction and Its Applications to Electromagnetic Problems
- Submicrometer Gold Interconnect Wiring by Sidewall Electroplating Technology
- Drugs for the Treatment of Allergic Diseases
- Pulmonary Coccidioidomycosis That Formed a Fungus Ball with 8-years Duration
- Realizing Highly Localized Exposure in Small Animals with Absorbing Material Covered Holder to Test Biological Effects of 1.5 GHz Cellular Telephones (Electromagnetic Compatibility (EMC))
- Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality
- Characterization of Thin Bonded Silicon-on-Insulator Structures by the Microwave Photocomductivity Decay Method
- Contactless Estimation of the Surface Recombination Velocity at High-Low Junction Surfaces Fabricated by the Ion-Implantation Technique