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Department Of Electrical And Computer Engineering Nagoya Institute Of Technology | 論文
- Effects of Dislocation and Stress on Characteristics of GaAs-Based Laser Grown on Si by Metalorganic Chemical Vapor Deposition
- Vapor Growth of AN-Doped ZnTe by the Closed-Tube Method
- Optical Characterization of GaSb-Based Ternary and Quaternary Alloys Grown by Liquid-Phase Epitaxy at Low Temperatures
- Photoluminescence Study of Al_xGa_Sb Grown by Liquid-Phase Epitaxy
- Consequences of a Simple Model for Two-Channel Reactions in Field Theory
- Direct Comparison of Quantized Hall Resistance between Si-MOSFET and GaAs/AlGaAs Heterostructure Devices on the Same Sample Holder
- Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector With High Internal Gain : Semiconductors
- Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Electrical Characteristics of Schottky Contacts on GaN and Al_Ga_N
- High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
- Optical Absorption and Photoluminescence Studies of n-type GaN
- Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- GaN on Si Substrate with AlGaN/AlN Intermediate Layer
- Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
- Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy
- Evaluation of Anti-allergic Effects of 1-Substituted 2-n-Butyl-methylenedioxy Indenes
- Charge-Density Wave Instabilities in Orthorhombic γ-Mo_4O_ : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Charge Density Waves
- Selective-Area-Grown AlGaAs/GaAs Single Quantum Well Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition
- Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
- GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes : Semiconductors