スポンサーリンク
Crystal Growth Centre, Anna University | 論文
- Atomic Force Microscope Studies on Domain Dynamics in Phosphate Substituted Triglycine Sulfate Single Crystals: Evidence for the Domain Boundary Motion towards Negative Region and Holes Formation at the Domain Boundary
- Surface Morphology of Ferroelectric Domains in BaTiO_3 Single Crystals : An Atomic Force Microscope Study
- Domain Structure Investigations of Triglycine Sulfo-Phosphate Single Crystal:Evidence of Domain Motion with Time at Room Temperature
- A comparison on the Electrical Characteristics of SiO_2, SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal-Oxide/Insulator-Semiconductor High-Electron Mobility-Transistors
- Optical and Electrical Studies on Trivalent-Ion (Cr, Fe)-Doped Potassium Titanyl Phosphate Single Crystals
- Optical Properties of High Energy Tin (Sn^) Ion Irradiated Metal-Organic Chemical Vapor Deposition Grown GaN on Sapphire
- Optical and Structural Quality of GaAs Epilayers from Gallium, Bismuth Mixed Solvents by Liquid Phase Epitaxy
- Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness
- High energy irradiation : a tool for enhancing the bioactivity of Hydroxyapatite
- Optical Properties of High Energy Tin (Sn5+) Ion Irradiated Metal-Organic Chemical Vapor Deposition Grown GaN on Sapphire
- Growth kinetic study of Liquid Phase Electro Epitaxial growth of InAs : a three dimensional simulation approach(NCCG-36)
- A comparison on the Electrical Characteristics of SiO2, SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal–Oxide/Insulator–Semiconductor High-Electron Mobility-Transistors
- Optical and Electrical Studies on Trivalent-Ion (Cr, Fe)-Doped Potassium Titanyl Phosphate Single Crystals
- Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness
- The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
- The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
- The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method
- Hard-templating Synthesis of Mesoporous Pt-Based Alloy Particles with Low Ni and Co Contents