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Corporate Manufacturing Engineering Center TOSHIBA Corporation | 論文
- Adsorption Properties of CH_3OH on Al(111) and Fe(100) Surfaces : A Periodic First-Principles Investigation
- Evaluation of LIDAR System in Rendezvous and Touchdown Sequence of Hayabusa Mission
- Factors Improving L-Threonine Production by a Three L-Threonine Biosynthetic Genes-amplified Recombinant Strain of Brevibacterium lactofermentum
- High Fermentative Production of L-Threonine from Acetate by a Brevibacterium flavum Stabilized Strain Transformed with a Recombinant Plasmid Carrying the Escherichia coli thr Operon
- Improvement of an L-Threonine Producer Derived from Brevibacterium flavum Using Threonine Operon of Escherichia coli K-12(Microbiology & Fermentation Industry)
- Effect of CHF_3 Addition on Reactive Ion Etching of Aluminum Using Inductively Coupled Plasma
- Investigation of Hydrogen Chemisorption on GaAs(111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation
- A Highly Selective Photoresist Ashing Process for Silicon Nitride Films by Addition of Trifluoromethane : Semiconductors
- Structural Properties of Li_xMn_2O_4 as Investigated by Molecular Dynamics and Density Functional Theory
- Dramatic Improvement of Surface Wave Plasma Performance Using a Corrugated Dielectric Plate : Nuclear Science, Plasmas, and Electric Discharges
- Investigation of Thermal Annealing Process of GaN Layer on Sapphire by Molecular Dynamics
- Investigation of Initial Growth Process of GaN Film on Sapphire Using Computational Chemistry
- Investigation of Growth Process of GaN Film on Sapphire by Computational Chemistry
- Atomistic Crystal Growth Process of Metal Oxide Electronics Materials : Theoretical Simulation Studies
- Quantum Chemical Calculations of Sulfur Doping Reactions in Diamond CVD
- Molecular Orbital Calculations of Sulfur Doping Reactions in Diamond CVD
- Computational Chemistry Study on Initial Stages of Nitridation of Silicon Surfaces
- Molecular Dynamics Simulations of Adhesional Forces via Hydrocarbon Films
- Nonlinear Susceptibility of Second Harmonic Generation Corresponded to the Diamond(100)Surface Structures
- Development of New Tight-Binding Molecular Dynamics Program to Simulate Chemical-Mechanical Polishing Processes