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Central Research Laboratory Tokyo Shibaura Electric Co. Ltd. | 論文
- Nuclear Magnetic Resonance in ScN and VN
- Fermi Level Stabilization and Surface States at the Interfaces of Si(111) Surfaces and Insulating Layers
- Temperature Dependence of the Surface Potential of Si(111) Surfaces with a Silicon-Nitride Layer
- Properties of CdSe-Sb_2S_3 Vidicon-Type Targets
- Characteristics of the New Vidicon-Type Camera Tube Using CdSe as a Target Material
- Electrical Properties of Cadmium Selenide Evaporated Films
- A Study of Gettering Effect of Metallic Impurities in Silicon
- Determination of Epitaxial-Layer Impurity Distriburion by Neutron A ctivation Method
- Experimental Study of MHD Power Generation
- Oscillations in Cadmium Sulfide
- The Observation of Oscillating Anode Glow by Means of High-Speed Camera
- The Effect of Gas Pressure in RF Ion Sources
- Plasma Density Dependence of RF Ion Sources
- Anodic Oscillation in Glow Discharge : (II) The Gap Properties, Analogous to an Ordinary Electric Oscillator with Linear Circuit Elements
- Efficiency of Red Luminescence in GaP
- Electron Mobility and Impurity Concentration in n-GaP Crystals Grown by Slow Cooling of Ga Solution
- Minority Carrier Lifetime in GaP Electroluminescent Diodes
- Nuclear Magnetic Resonance Studies of CuCr_2 Se_4 and CuCr_2 Te_4
- Nuclear Magnetic Resonance in Cu Cr_2 Se_4 and Cu Cr_2 Te_4
- Electrical Anomaly in AgMgAs Compound