スポンサーリンク
Central Research Laboratory, Mitsubishi Electric Corporation | 論文
- Transient Characteristics of Photoluminescence from GaAs/Ga_Al_As Single Quantum Well Structure
- 45° Grain Boundary Junctions in (001)-Oriented BiSrCaCuO Films
- (01n)-Oriented BiSrCaCuO Thin Films Formed on CeO_2 Buffer Layers
- Microscopic Study of an Artificial Grain Boundary Josephson Junction in a BiSrCaCuO Thin Film Formed on a SrTiO_3 (110) Substrate Using a MgO Buffer Layer
- Artificial Grain Boundary Junctions in BiSrCaCuO Thin Films with (11n) and (001) Orientation
- Dependence of Crystal Orientation of BiSrCaCuO Thin Films on Off-Angles of Vicinal SrTiO_3 (110) Surfaces
- Crystal Orientation of BiSrCaCuO (11n) Thin Films Determined by X-ray Asymmetric Reflection
- Microscopic Study on (11n)-Oriented BiSrCaCuO Films by Cross-Sectional Transmission Electron Microscopy
- BiSrCaCuO Thin Film Grown on SrTiO_3 Substrate with Off-Oriented (110) Surface
- Bi_2(Sr, Ca)_3Cu_2O_x and Bi_2(Sr, Ca)_4Cu_3O_x Thin Films with (11n) Orientation
- Scroll Compressor Dynamics : 2nd Report, The Compliant Crank and the Vibration Model
- Influence of Impurities on the Growth of Tin Whiskers
- Role of Carbon and Hydrogen in Reactive Ion Etching of InP by Gas Mixture of Ethane and Hydrogen
- Open-Tube Zn Diffusion Method for InGaAsP/InP Heterojunction Bipolar Transistors
- Fe and Al Concentrations in High Resistivity InP Layer Grown by Low-Temperature Liquid Phase Epitaxy
- Ohmic Contacts to P-Type GaAs
- Control of the Surface Shape of GaAs Schottky Barrier Diodes by Mesa-Etching
- Electron Wave Transfer in Coupled Quantum Wires and Its Control by Externally Applied Electric Field
- Effect of Ethane Addition to Argon in Etching of BiSrCaCuO Superconducting Thin Films
- (11n)-Oriented BiSrCaCuO Thin Film Formed on SrTiO_3(110) Substrate by RF Magnetron Sputtering