スポンサーリンク
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan | 論文
- Read-head Conditions for Obtaining Areal Recording Density of 5.8 Tbit/in.2 on a Bit-Patterned Medium
- Experimental Demonstration of Optical Phase Multilevel Recording in Microhologram
- Control System for Readout Electronics of Multi-Channel Magnetocardiographs Using High-Temperature DC Superconducting Quantum Interference Devices
- Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs
- Simulation of Multilayer Defects in Extreme Ultraviolet Masks
- Copper Diffusion Behavior in SiO2/Si Structure During 400°C Annealing
- Amplified Spontaneous Emission Measurement of GaInNAs Laser Wafers with and without Rapid Thermal Annealing
- Conductivity at Each Layer of a Spin Valve System
- Post-Annealing Effects on a Laterally Grown Polycrystalline Silicon Layer
- Preparatory Study for the Matrix-Pattern Imaging, EB System
- Immobilization of DNA Probes onto Gold Surface and its Application to Fully Electric Detection of DNA Hybridization using Field-Effect Transistor Sensor
- Physical Considerations on Bernoulli's Law for Mitral Valve Regurgitation
- Investigation of Mask Inclination Due to Oxygen-Radical Irradiation during Resist Trimming
- Intraventricular Flow Velocity Vector Visualization Based on the Continuity Equation and Measurements of Vorticity and Wall Shear Stress
- Effect of Micro-Bubbles in Water on Beam Patterns of Parametric Array
- State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO
- State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO₂ Films in a Metal-Oxide-Silicon Structure