Conductivity at Each Layer of a Spin Valve System
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概要
- 論文の詳細を見る
The conductivity at each layer of a spin valve system consisting of a ferromagnet, a spacer, and a ferromagnet was investigated using the tight binding model and the Kubo formula. The interfacial roughness was treated by the coherent locator approximation, in which the coherent potential approximation was extended to enable application to alloys with various transfer integrals. In this system, the giant magnetoresistance (GMR) effect appears to originate from the dependence of conductivity in the spacer on the magnetization configuration. Furthermore, the atom-dependent transfer integral and the atom- and spin-dependent relaxation time strongly affect the conductivity and the GMR effect.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2001-05-15
著者
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Kokado Satoshi
Central Research Laboratory Hitachi Ltd.
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Kokado Satoshi
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan