Post-Annealing Effects on a Laterally Grown Polycrystalline Silicon Layer

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概要

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• A polysrystalline silicon (poly-Si) layer prepared by selectively enlarging laser crystallization (SELAX) was post-annealed by excimer laser irradiation. The average grain width increased 26% because of partly merged grains, while the morphological trace of the laterally grown poly-Si layer was maintained. The difference in field-effect mobility resulting from thin-film-transistor (TFT) configuration was reduced by post-annealing. The field-effect mobility of TFTs parallel to the lateral growth direction decreased slightly (within 4.5% for n-type and 11.5% for p-type). On the other hand, TFTs configured perpendicular to the lateral growth direction increased as the energy density during post-annealing increased (up to 200% for both types). For n-type TFTs these results were attributed to the increase of the effective width of the grain and the reduction of the density of trapping states at grain boundaries.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-08-25

著者

• OHKURA Makoto

  Hitachi Central Research Laboratory

• Hatano Mutsuko

  Central Research Laboratory Hitachi Ltd

• Hatano Mutsuko

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Tai Mitsuharu

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Sato Takeshi

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Matsumura Mieko

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Ohkura Makoto

  Hitachi Displays, Ltd., Mobara, Chiba 297-8622, Japan

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• Observation of Electron-Wave Interference at Semiconductor-Superconductor Boundary : Micro/nanofabrication and Devices
• Post-Annealing Effects on a Laterally Grown Polycrystalline Silicon Layer
• Temperature Dependence of Performance and Hot-Carrier Immunity in Low-Temperature Polycrystalline Silicon Thin-Film Transistors
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