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Central Research Laboratories, SHARP Corporation | 論文
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Thickness Dependence of Furnace N_2O-Oxynitridation Effects on Breakdown of Thermal Oxides
- Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)
- Low Resistance and Thermally Stable Ti-Silicided Shallow Junction Formed by Advanced 2-Step Rapid Thermal Processing and Its Application to Deep Submicron Contact
- EPR Studies of Cu^ and Gd^ in High-T_c Superconductors Y_1Ba_2Cu_3O_
- Four States of Surface-Stabilized Ferroelectric Liquid Crystal with Parallel Rubbing
- Effect of Surface Pretilt Angle on Optical Properties of Surface-Stabilized Ferroelectric Liquid Crystals
- High Reliability in AlGaAs Laser Diodes Prepared by Molecular Beam Epitaxy on 0.5°-Misoriented (111)B Substrates : Waves, Optics and Quantum Electronics
- Enhancement of the Capture Rate of Carriers in (111)-Oriented GaAs/AlGaAs Quantum Well Structures : Electrical Properties of Condensed Matter
- Enhancement of Heavy-Hole-Related Excitonic Optical Transitions in (111)-Oriented Quantum Wells : Surfaces, Interfaces and Films
- Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
- Long-Lived (GaAl) As DH Lasers Bonded with In Produced by Eliminating Deterioration of In Solder
- MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer
- Seeded Electron Beam Recrystallization of Large Area SOI Using Striped Tungsten Encapsulation Technique
- Elevated Polycide Source/Drain Shallow Junctions with Advanced Silicidation Processing and Al Plug/Collimated PVD (Physical Vapor Deposition)- Ti/TiN/Ti/Polycide Contact for Deep-Submicron Complementary Metal-Oxide Semiconductors
- Influence of Deformation of Smectic Layer Structure on Dielectric Behavior of Ferroelectric Liquid Crystal
- Ferroelectric Liquid Crystal Mixtures Containing Chiral Pyranose Compounds for Response-Voltage Minimum Mode
- Layer Tilt Angle of Chevron Structure in Surface-Stabilized Ferroelectric Liquid Crystals
- Models of Molecular Orientation in Surface-Stabilized Ferroelectric Liquid Crystals with High-Pretilt Aligning Film