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Central Research Laboratories, Matsushita Electric Industrial Co., Ltd. | 論文
- Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition
- Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films
- Effect of Hydrogen Plasma Treatment on Implantation Damage in Diamond Films Grown by Chemical Vapour Deposition
- Synthesis of β-SiC Layer in Silicon by Carbon Ion 'Hot' Implantation
- Reduction of Threshold Current Density of Wurtzite GaN/AlGaN Quantum Well Lasers by Uniaxial Strain in (0001) Plane
- First-Principles Calculation of Effective Mass Parameters of Gallium Nitride
- Low-Temperature Preparation of Pb(Zr,Ti)O_3 Thin Filmson (Pb,La)TiO_3 Buffer Layer by Multi-Jon-Beam Sputtering
- Structural Properties of Silicon Oxide Films Prepared by the RF Substrate Biased ECR Plasma CVD Method
- Properties of Hydrogenated Amorphous Silicon Prepared by ECR Plasma CVD Method : Condensed Matter
- Preparation of Pb-Based Ferroelectric Thin Films at Room Temperature Using Excimer-Laser-Assisted Multi-Ion-Beam Sputtering
- Preparation of La-Modified Lead Titanate Thin Films by Rf-Magnetron Sputtering Method and Their Pyroelectric Properties
- Preparation of Pyroelectric Pb_La_xTi_O_3 Thin Films from Ceramic Target by RF Magnetron Sputtering
- Characterization of Pb(Zr, Ti)O_3 Thin Films Prepared by Multi-Ion-Beam Sputtering
- Substrate Potential Effects on Low-Temperature Preparation of SrTiO_3 Thin Films by RF Magnetron Sputtering
- Ferroelectric PbTiO_3 Thin Films Prepared by Multi-Ion-Beam Sputter and Ion-Assisted Deposition
- Formation of n^+ a-Si:H Thin Layer by Ion-Doping Technique
- β-SiC Formation by Low-Energy Ion-Doping Technique
- Characteristics of Superconducting Gd-Ba-Cu-O Thin Films
- Plasma Irradiation Effects on Nd-Ce-Cu-O and La-Sr-Cu-O Thin Films
- Superconductivity in Nd-Ce-Cu-O Thin Films