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Applied Materials Inc. | 論文
- CuAl合金シードを用いたCu配線の信頼性改善
- Extending CVD Low-k Interlayer Dielectric Solutions to 45nm and Beyond
- Highly Selective SiO_2 Etch Employing Inductively Coupled Hydro-Fluorocarbon Plasma Chemistry for Self Aligned Contact Etch
- Decoupled Plasma Source Technology: Process Region Choices For Silicide Etching
- A Manufacturable HDP Oxide Filled STI Process with SiN Liner for the Deep Sub-Micron Inter-Well Isolation
- Combining Embedded and Overlayer Compressive Stressors in Advanced SOI CMOS Technologies
- Characterization of Low-Temperature Stress Hump in Relation to Phase Formation Sequence of Nickel Silicide