Highly Selective SiO_2 Etch Employing Inductively Coupled Hydro-Fluorocarbon Plasma Chemistry for Self Aligned Contact Etch

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概要

• 論文の詳細を見る

• An inductively coupled plasma chemistry including hydro-fluorocarbon gas (CHF_3, CH_2F_2 or CH_3F) in addition to C_4F_8 and Ar was developed for the self aligned contact process of LSI. The additional gases effectively reduces the etch rate of the nitride stopper in the contact hole resulting an increased selective ratio. The effect becomes more marked with higher H numbers. The optical emission signals of both F radical and carbon, including radicals such as C_2, CF and CF_2, were decreased by the addition of CH_3F. The improved selectivity is considered to be due to the increased concentration of radicals with C-H bonding. The effect of C-H including radicals was explained by the enthalpy of reaction with oxygen and nitrogen atoms to form CO or CN bonding, and an improved step coverage of the polymerized film protecting the nitride surface.

• 社団法人応用物理学会の論文
• 1997-09-15

著者

• Okano Haruo

  Applied Materials Japan Inc.

• Ishikawa Yoshio

  Applied Materials Japan Inc.

• IIJIMA Yukio

  Applied Materials Japan Inc.

• YANG Chan-lon

  Applied Materials Inc.

• CHANG Mei

  Applied Materials Inc.

• Yang C‐l

  National Chiao‐tung Univ. Hsinchu Twn

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