Decoupled Plasma Source Technology: Process Region Choices For Silicide Etching

概要

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We have developed a decoupled plasma source (DPS) etcher for polysilicon and polycide etching. A series of experiments has been carried out to study polycide gate etching in the DPS etcher. By combining conventional techniques of process evaluation with in situ. monitoring of ions and radical chemistry and with real-time ion flux density distribution measurements, we quantitatively determined trends in polycide processing and etching with simple Cl_2 and He/O_2 chemistry. Performance parameters, such as etch rate, etch rate microloading, etch rate uniformity, profile, profile microloading and profile uniformity on WSi_x oxide, polysilicon and photoresist, were measured at 24 points on the surface matrix. These results were correlated with the physical and chemical parameters of the decoupled plasma, such as ion flux distribution, DC-bias potential across the wafer, plasma ion composition and concentration of neutrals. A vertical profile can be obtained with highly selective polycide etch in a single step main etch with Cl_2 and He/O_2 using a decoupled plasma silicon etch reactor.
社団法人応用物理学会の論文
1997-04-30